- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,136
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
1,040
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 0.33A SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | P-Channel | 20V | 330mA (Ta) | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,410
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 0.63A SC-75A | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75A | 240mW (Ta) | N-Channel | 20V | - | 396 mOhm @ 600mA, 4.5V | 1V @ 250µA | 2nC @ 8V | 43pF @ 10V | 1.5V, 4.5V | ±8V | |||
