- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,765
In-stock
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ON Semiconductor | MOSFET P-CH 20V 6-MICROFET | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | P-Channel | - | 20V | 7.8A (Ta) | 24 mOhm @ 7.8A, 5V | 1.5V @ 250µA | 42nC @ 5V | 2015pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,257
In-stock
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Texas Instruments | MOSFET P-CH 20V 48A 6SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | - | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,070
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2.3A 6-WDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.3A (Ta) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | 1.8V, 4.5V | ±8V | |||
