- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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969
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A VS-8 | U-MOSIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | 12V | 6A (Ta) | 28 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | 1600pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,428
In-stock
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Rohm Semiconductor | MOSFET P-CH 20V 10A 8HUML | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerUDFN | HUML2020L8 | 2W (Ta) | P-Channel | 20V | 10A (Ta) | 26 mOhm @ 5A, 4.5V | 1V @ 1mA | 55nC @ 4.5V | 5500pF @ 10V | 1.8V, 4.5V | -8V | |||
