- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,773
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
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2,422
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
969
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A VS-8 | U-MOSIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 12V | 6A (Ta) | 28 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | 1600pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,220
In-stock
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STMicroelectronics | MOSFET P-CH 20V 3A SOT23-6 | STripFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | 1.6W (Tc) | P-Channel | - | 20V | 3A (Tc) | 100 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 510pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,324
In-stock
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Rohm Semiconductor | MOSFET P-CH 20V 700MA DFN1006 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-XFDFN | DFN1006-3 | 400mW (Ta) | P-Channel | - | 20V | 700mA (Ta) | 300 mOhm @ 1.4A, 4.5V | 1V @ 100µA | - | 100pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,271
In-stock
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Panasonic Electronic Components | MOSFET P-CH 12V 4A WSMINI6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | WSMini6-F1-B | 700mW (Ta) | P-Channel | - | 12V | 4A (Ta) | 34 mOhm @ 1A, 4.5V | 1V @ 1mA | - | 1400pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,952
In-stock
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STMicroelectronics | MOSFET P-CH 20V 4A PWRFLAT2X2 | DeepGATE™, STripFET™ VII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-PowerWDFN | PowerFlat™ (2x2) | 2.4W (Tc) | P-Channel | - | 20V | 4A (Tc) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 510pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,850
In-stock
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STMicroelectronics | MOSFET P-CH 20V 1.4A SOT-23 | STripFET™ H7 | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 350mW (Tc) | P-Channel | - | 20V | 1.4A (Ta) | 100 mOhm @ 700mA, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 510pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,502
In-stock
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Panasonic Electronic Components | MOSFET P-CH 12V 4A WSMINI6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | WSMini6-F1-B | 700mW (Ta) | P-Channel | - | 12V | 4A (Ta) | 34 mOhm @ 1A, 4.5V | 1V @ 1mA | - | 1400pF @ 10V | 1.8V, 4.5V | ±8V | |||
