Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPCF8101(TE85L,F,M
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A VS-8 U-MOSIII Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 700mW (Ta) P-Channel 12V 6A (Ta) 28 mOhm @ 3A, 4.5V 1.2V @ 200µA 18nC @ 5V 1600pF @ 10V 1.8V, 4.5V ±8V
SSM3J355R,LF
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1,447
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V
CPH6347-TL-W
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3,557
In-stock
ON Semiconductor MOSFET P-CH 20V 6A CPH6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-CPH 1.6W (Ta) P-Channel 20V 6A (Ta) 39 mOhm @ 3A, 4.5V 1.4V @ 1mA 10.5nC @ 4.5V 860pF @ 10V 1.8V, 4.5V ±12V