Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMV170UN,215
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3,539
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NXP USA Inc. MOSFET N-CH 20V 1A TO-236AB - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 325mW (Ta), 1.14W (Tc) N-Channel 20V 1A (Ta) 165 mOhm @ 1A, 4.5V 1V @ 250µA 1.65nC @ 4.5V 83pF @ 10V 1.8V, 4.5V ±8V
PMR290UNE,115
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RFQ
2,921
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NXP USA Inc. MOSFET N-CH 20V 700MA SC-75 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-75, SOT-416 SC-75 250mW (Ta), 770mW (Tc) N-Channel 20V 700mA (Ta) 380 mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68nC @ 4.5V 83pF @ 10V 1.8V, 4.5V ±8V
PMZB290UNE,315
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RFQ
2,245
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Nexperia USA Inc. MOSFET N-CH 20V 1A DFN1006B-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-DFN1006B (0.6x1) 360mW (Ta), 2.7W (Tc) N-Channel 20V 1A (Ta) 380 mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68nC @ 4.5V 83pF @ 10V 1.8V, 4.5V ±8V
PMZB290UN,315
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RFQ
1,561
In-stock
Nexperia USA Inc. MOSFET N-CH 20V 1A 3DFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-DFN1006B (0.6x1) 360mW (Ta), 2.7W (Tc) N-Channel 20V 1A (Ta) 380 mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68nC @ 4.5V 83pF @ 10V 1.8V, 4.5V ±8V
PMZ290UNEYL
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RFQ
1,065
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Nexperia USA Inc. MOSFET N-CH 20V 1A XQFN3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-101, SOT-883 DFN1006-3 360mW (Ta), 2.7W (Tc) N-Channel 20V 1A (Ta) 380 mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68nC @ 4.5V 83pF @ 10V 1.8V, 4.5V ±8V