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- Package / Case :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,076
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | 1.05W (Ta) | P-Channel | 20V | 6.2A (Ta) | 15 mOhm @ 7.4A, 4.5V | 800mV @ 250µA | 60nC @ 5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,299
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP | 1.05W (Ta) | P-Channel | 20V | 6.2A (Ta) | 15 mOhm @ 7.4A, 4.5V | 800mV @ 250µA | 60nC @ 5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
712
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 6.2A 6DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 660mW (Ta) | P-Channel | 20V | 6.2A (Ta) | 36 mOhm @ 4.6A, 4.5V | 1.1V @ 250µA | 14.4nC @ 4.5V | 1537pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,402
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V 6WLCSP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.48x.98) | 556mW (Ta), 12.5W (Tc) | P-Channel | 12V | 6.2A (Ta) | 25 mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4nC @ 4.5V | 1400pF @ 6V | 1.8V, 4.5V | ±8V | |||
