Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD35N12S3L24ATMA1
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2,150
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Infineon Technologies MOSFET N-CH 120V 35A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 71W (Tc) N-Channel 120V 35A (Tc) 24 mOhm @ 35A, 10V 2.4V @ 39µA 39nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
SQJ860EP-T1_GE3
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3,668
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Vishay Siliconix MOSFET N-CH 40V 60A POWERPAKSO-8 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 48W (Tc) N-Channel 40V 60A (Tc) 6 mOhm @ 10A, 10V 2.5V @ 250µA 55nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
IPD35N10S3L26ATMA1
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1,156
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Infineon Technologies MOSFET N-CH 100V 35A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 71W (Tc) N-Channel 100V 35A (Tc) 24 mOhm @ 35A, 10V 2.4V @ 39µA 39nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
NTMFS5832NLT1G
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2,181
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ON Semiconductor MOSFET N-CH 40V 110A SO-8FL - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN, 5 Leads 5-DFN (5x6) (8-SOFL) 3.1W (Ta), 96W (Tc) N-Channel 40V 20A (Ta), 111A (Tc) 4.2 mOhm @ 20A, 10V 3V @ 250µA 51nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V