- Manufacture :
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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,998
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,889
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
760
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.1A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,390
In-stock
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Diodes Incorporated | MOSFET P-CH 60V TSOT26 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | P-Channel | 60V | 7.3A (Tc) | 105 mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,152
In-stock
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Diodes Incorporated | MOSFET P-CH 60V 4.2A UDFN2020-6 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 1.97W (Ta) | P-Channel | 60V | 4.2A (Ta) | 110 mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,175
In-stock
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Diodes Incorporated | MOSFET P-CH 60V TSOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | P-Channel | 60V | 7.3A (Tc) | 105 mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | 4.5V, 10V | ±20V | |||
