Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET P-CH 40V 2.5A 6-TSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 40V 2.5A (Ta) 198 mOhm @ 2.5A, 10V 3V @ 250µA 8.5nC @ 10V 680pF @ 25V 4.5V, 10V ±20V
NTD14N03RT4
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1,837
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ON Semiconductor MOSFET N-CH 25V 2.5A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.04W (Ta), 20.8W (Tc) N-Channel - 25V 2.5A (Ta) 95 mOhm @ 5A, 10V 2V @ 250µA 1.8nC @ 5V 115pF @ 20V 4.5V, 10V ±20V
SSM3K318T,LF
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3,347
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V - 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V
DMP3125L-7
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2,883
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Diodes Incorporated MOSFET P-CHAN 30V SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 650mW (Ta) P-Channel - 30V 2.5A (Ta) 95 mOhm @ 3.8A, 10V 2.1V @ 250µA 3.1nC @ 4.5V 254pF @ 25V 4.5V, 10V ±20V
NTGS3455T1G
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3,727
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ON Semiconductor MOSFET P-CH 30V 2.5A 6-TSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 500mW (Ta) P-Channel - 30V 2.5A (Ta) 100 mOhm @ 3.5A, 10V 3V @ 250µA 13nC @ 10V 480pF @ 5V 4.5V, 10V ±20V
NTD14N03RT4G
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RFQ
3,212
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ON Semiconductor MOSFET N-CH 25V 2.5A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.04W (Ta), 20.8W (Tc) N-Channel - 25V 2.5A (Ta) 95 mOhm @ 5A, 10V 2V @ 250µA 1.8nC @ 5V 115pF @ 20V 4.5V, 10V ±20V
SI2307BDS-T1-E3
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2,358
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Vishay Siliconix MOSFET P-CH 30V 2.5A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 30V 2.5A (Ta) 78 mOhm @ 3.2A, 10V 3V @ 250µA 15nC @ 10V 380pF @ 15V 4.5V, 10V ±20V
DMN3110S-7
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1,433
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Diodes Incorporated MOSFET N-CH 30V 2.5A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 740mW (Ta) N-Channel - 30V 2.5A (Ta) 73 mOhm @ 3.1mA, 10V 3V @ 250µA 8.6nC @ 10V 305.8pF @ 15V 4.5V, 10V ±20V
DMG2307L-7
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1,416
In-stock
Diodes Incorporated MOSFET P-CH 30V 2.5A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 760mW (Ta) P-Channel - 30V 2.5A (Ta) 90 mOhm @ 2.5A, 10V 3V @ 250µA 8.2nC @ 10V 371.3pF @ 15V 4.5V, 10V ±20V
NDT2955
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VIEW
RFQ
3,761
In-stock
ON Semiconductor MOSFET P-CH 60V 2.5A SOT-223-4 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel - 60V 2.5A (Ta) 300 mOhm @ 2.5A, 10V 4V @ 250µA 15nC @ 10V 601pF @ 30V 4.5V, 10V ±20V
SSM3K318R,LF
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VIEW
RFQ
1,157
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V 2.8V @ 1mA 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V