- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,751
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 90A D2PAK | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 13.6W (Ta), 375W (Tc) | P-Channel | - | 100V | 90A (Tc) | 19 mOhm @ 20A, 10V | 3V @ 250µA | 326nC @ 10V | 11100pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
1,468
In-stock
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Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 136W (Tc) | N-Channel | - | 100V | 90A (Tc) | 6.6 mOhm @ 90A, 10V | 2.1V @ 90µA | 98nC @ 10V | 6250pF @ 25V | 4.5V, 10V | ±16V | |||
