- Manufacture :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,468
In-stock
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Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 136W (Tc) | N-Channel | - | 100V | 90A (Tc) | 6.6 mOhm @ 90A, 10V | 2.1V @ 90µA | 98nC @ 10V | 6250pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
1,902
In-stock
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Vishay Siliconix | MOSFET N-CHAN 100V TO252 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 136W (Tc) | N-Channel | - | 100V | 50A (Tc) | 8.9 mOhm @ 15A, 10V | 2.5V @ 250µA | 70nC @ 10V | 2950pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,784
In-stock
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Vishay Siliconix | MOSFET P-CHAN 100V TO252 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 136W (Tc) | P-Channel | - | 100V | 38A (Tc) | 40 mOhm @ 8.2A, 10V | 2.5V @ 250µA | 144nC @ 10V | 5540pF @ 15V | 4.5V, 10V | ±20V | |||
