Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSS84PL6327HTSA1
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1,691
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Infineon Technologies MOSFET P-CH 60V 170MA SOT-23 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) P-Channel - 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 4.5V, 10V ±20V
BSS84P-E6327
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856
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Infineon Technologies MOSFET P-CH 60V 170MA SOT-23 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) P-Channel - 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 4.5V, 10V ±20V
BSS84PH6433XTMA1
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3,558
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Infineon Technologies MOSFET P-CH 60V 170MA SOT-23 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) P-Channel - 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 4.5V, 10V ±20V
BSS84PH6327XTSA2
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RFQ
688
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Infineon Technologies MOSFET P-CH 60V 170MA SOT-23 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 360mW (Ta) P-Channel - 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 4.5V, 10V ±20V