Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMV45EN,215
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NXP USA Inc. MOSFET N-CH 30V 5.4A SOT-23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 280mW (Tj) N-Channel - 30V 5.4A (Tc) 42 mOhm @ 2A, 10V 2V @ 1mA 9.4nC @ 10V 350pF @ 30V 4.5V, 10V ±20V
PMV60EN,215
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NXP USA Inc. MOSFET N-CH 30V 4.7A SOT-23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 280mW (Tj) N-Channel - 30V 4.7A (Tc) 55 mOhm @ 2A, 10V 2V @ 1mA 9.4nC @ 10V 350pF @ 30V 4.5V, 10V ±20V