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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,506
In-stock
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NXP USA Inc. | MOSFET N-CH 30V 3.1A SOT-23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 380mW (Ta) | N-Channel | 30V | 3.1A (Ta) | 36 mOhm @ 3.1A, 10V | 2.5V @ 250µA | 10nC @ 10V | 330pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,704
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.25W (Ta) | N-Channel | 60V | - | 160 mOhm @ 2A, 10V | 3V @ 250µA | 10nC @ 10V | 240pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
836
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 1.49A SOT23-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | P-Channel | 30V | 1.49A (Ta) | 200 mOhm @ 1.7A, 10V | 3V @ 250µA | 10nC @ 10V | 180pF @ 15V | 4.5V, 10V | ±20V | |||
