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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,592
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | HEXFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
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1,166
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 30V 70A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 54W (Tc) | N-Channel | 30V | 70A (Tc) | 6 mOhm @ 20A, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | 1160pF @ 25V | 4.5V, 10V | ±20V | |||
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1,421
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 30V 80A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 74W (Tc) | N-Channel | 30V | 80A (Tc) | 5.5 mOhm @ 20A, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | 1160pF @ 25V | 4.5V, 10V | ±20V | |||
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1,564
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
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VIEW |
2,737
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 500V 9A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 178W (Tc) | N-Channel | 500V | 9A (Tc) | 860 mOhm @ 4.5A, 10V | 4.5V @ 250µA | 24nC @ 10V | 1160pF @ 25V | 10V | ±30V | |||
