Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD25N06S4L30ATMA1
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RFQ
1,319
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Infineon Technologies MOSFET N-CH 60V 25A TO252-3 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 29W (Tc) N-Channel - 60V 25A (Tc) 30 mOhm @ 25A, 10V 2.2V @ 8µA 16.3nC @ 10V 1220pF @ 25V 4.5V, 10V ±16V
PHD71NQ03LT,118
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3,900
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Nexperia USA Inc. MOSFET N-CH 30V 75A DPAK TrenchMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 120W (Tc) N-Channel - 30V 75A (Tc) 10 mOhm @ 25A, 10V 2.5V @ 1mA 13.2nC @ 5V 1220pF @ 25V 5V, 10V ±20V
HUF75631S3ST
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RFQ
670
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ON Semiconductor MOSFET N-CH 100V 33A D2PAK UltraFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 120W (Tc) N-Channel - 100V 33A (Tc) 40 mOhm @ 33A, 10V 4V @ 250µA 79nC @ 20V 1220pF @ 25V 10V ±20V
IPD25N06S4L30ATMA2
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1,446
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Infineon Technologies MOSFET N-CH 60V 25A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 29W (Tc) N-Channel - 60V 25A (Tc) 30 mOhm @ 25A, 10V 2.2V @ 8µA 16.3nC @ 10V 1220pF @ 25V 4.5V, 10V ±16V