Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A SOT23F U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel 12V 6A (Ta) 17.6 mOhm @ 6A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
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Nexperia USA Inc. MOSFET P-CH 12V 6WLCSP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-XFBGA, WLCSP 6-WLCSP (1.48x.98) 556mW (Ta), 12.5W (Tc) P-Channel 12V 6.2A (Ta) 25 mOhm @ 3A, 4.5V 900mV @ 250µA 29.4nC @ 4.5V 1400pF @ 6V 1.8V, 4.5V ±8V