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- Power Dissipation (Max) :
- FET Type :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,282
In-stock
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STMicroelectronics | MOSFET N-CH 650V 4A D2PAK | MDmesh™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 60W (Tc) | N-Channel | 650V | 4A (Tc) | 1.35 Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | 226pF @ 100V | 10V | ±25V | |||
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VIEW |
919
In-stock
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STMicroelectronics | MOSFET N-CH 650V 4A DPAK | MDmesh™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | 650V | 4A (Tc) | 1.35 Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | 226pF @ 100V | 10V | ±25V | |||
|
VIEW |
1,760
In-stock
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Micro Commercial Co | P-CHANNEL MOSFET, SOT-23 PACKAGE | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 250mW (Ta) | P-Channel | 30V | 3A (Ta) | 180 mOhm @ 2A, 4.5V | 3V @ 250µA | 10nC @ 10V | 226pF @ 100V | 10V | ±20V | |||
