Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB60R125CPATMA1
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952
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Infineon Technologies MOSFET N-CH 600V 25A TO263 CoolMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 208W (Tc) N-Channel - 600V 25A (Tc) 125 mOhm @ 16A, 10V 3.5V @ 1.1mA 70nC @ 10V 2500pF @ 100V 10V ±20V
STB40N60M2
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2,394
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STMicroelectronics MOSFET N-CH 600V 34A D2PAK MDmesh™ II Plus Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 250W (Tc) N-Channel - 600V 34A (Tc) 88 mOhm @ 17A, 10V 4V @ 250µA 57nC @ 10V 2500pF @ 100V 10V ±25V
STB45N60DM2AG
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1,389
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STMicroelectronics MOSFET N-CH 600V 34A Automotive, AEC-Q101, MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DPAK 250W (Tc) N-Channel - 600V 34A (Tc) 90 mOhm @ 17A, 10V 5V @ 250µA 56nC @ 10V 2500pF @ 100V 10V ±25V