Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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CSD13303W1015
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2,551
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Texas Instruments MOSFET N-CH 12V 31A 6DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, DSBGA 6-DSBGA 1.65W (Ta) N-Channel 12V 31A (Ta) 20 mOhm @ 1.5A, 4.5V 1.2V @ 250µA 4.7nC @ 4.5V 715pF @ 6V 2.5V, 4.5V ±8V
SI2315BDS-T1-E3
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1,603
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Vishay Siliconix MOSFET P-CH 12V 3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel 12V 3A (Ta) 50 mOhm @ 3.85A, 4.5V 900mV @ 250µA 15nC @ 4.5V 715pF @ 6V 1.8V, 4.5V ±8V
SI2315BDS-T1-GE3
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3,270
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Vishay Siliconix MOSFET P-CH 12V 3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 750mW (Ta) P-Channel 12V 3A (Ta) 50 mOhm @ 3.85A, 4.5V 900mV @ 250µA 15nC @ 4.5V 715pF @ 6V 4.5V ±8V
SI2321-TP
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3,099
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Micro Commercial Co P-CHANNEL MOSFET, SOT-23 PACKAGE - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Ta) P-Channel 20V 2.9A (Ta) 110 mOhm @ 2.2A, 10V 900mV @ 250µA 13nC @ 4.5V 715pF @ 6V 4.5V ±12V