- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SOT223-1.jpg)
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VIEW |
1,726
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8W (Tc) | N-Channel | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | |||
,%20SC-63.JPG)
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VIEW |
1,758
In-stock
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ON Semiconductor | MOSFET N-CH 200V 4.5A D-PAK | UniFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | N-Channel | 200V | 4.5A (Tc) | 800 mOhm @ 2.3A, 10V | 5V @ 250µA | 6.1nC @ 10V | 230pF @ 25V | 10V | ±30V | |||
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|
VIEW |
672
In-stock
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ON Semiconductor | MOSFET N-CH 150V 4.3A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 30W (Tc) | N-Channel | 150V | 4.3A (Tc) | 800 mOhm @ 2.15A, 10V | 4V @ 250µA | 7nC @ 10V | 230pF @ 25V | 10V | ±25V | |||
|
VIEW |
1,612
In-stock
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ON Semiconductor | MOSFET N-CH 500V 0.35A TO-92-3 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92-3 | 1.5W (Tc) | N-Channel | 500V | 350mA (Tc) | 5.3 Ohm @ 175mA, 10V | 3.7V @ 250µA | 8nC @ 10V | 230pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,464
In-stock
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ON Semiconductor | MOSFET N-CH 200V 4.5A DPAK | UniFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | N-Channel | 200V | 4.5A (Tc) | 800 mOhm @ 2.3A, 10V | 5V @ 250µA | 6.1nC @ 10V | 230pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,342
In-stock
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Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,111
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT-223 | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
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|
VIEW |
948
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
2,402
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8W (Tc) | N-Channel | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | |||
