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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,251
In-stock
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Rohm Semiconductor | MOSFET P-CH 20V 3A TSMT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | P-Channel | - | 20V | 3A (Ta) | 75 mOhm @ 3A, 4.5V | 2V @ 1mA | 9.3nC @ 4.5V | 840pF @ 10V | 2.5V, 4.5V | ±12V | |||
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702
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,262
In-stock
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Vishay Siliconix | MOSFET P-CHANNEL 20V 7.4A 6TSOP | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 5W (Tc) | P-Channel | - | 20V | 7.4A (Tc) | 60 mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 10.3nC @ 4.5V | 840pF @ 10V | 2.5V, 4.5V | ±12V | |||
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3,385
In-stock
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Nexperia USA Inc. | MOSFET N-CH 30V 9A 6DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | N-Channel | - | 30V | 9A (Ta) | 14.5 mOhm @ 9A, 10V | 2V @ 250µA | 20.6nC @ 10V | 840pF @ 10V | 4.5V, 10V | ±20V | |||
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1,851
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
812
In-stock
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Toshiba Semiconductor and Storage | SMALL-SIGNAL PCH MOSFET UMOSVI | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 6-TSOP-F | 1.5W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.5 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | +6V, -8V | |||
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VIEW |
1,074
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
