Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRL3103D1STRLP
RFQ
VIEW
RFQ
829
In-stock
Infineon Technologies MOSFET N-CH 30V 64A D2PAK FETKY™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
IRFZ44STRRPBF
RFQ
VIEW
RFQ
3,837
In-stock
Vishay Siliconix MOSFET N-CH 60V 50A D2PAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 150W (Tc) N-Channel - 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 10V ±20V
BUZ30AH3045AATMA1
RFQ
VIEW
RFQ
3,316
In-stock
Infineon Technologies MOSFET N-CH 200V 21A TO-263 SIPMOS® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 125W (Tc) N-Channel - 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
850
In-stock
ON Semiconductor T6 40V DPAK EXPANSION AND Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 3.1W (Ta), 56W (Tc) N-Channel - 40V 19A (Ta), 82A (Tc) 4.2 mOhm @ 40A, 10V 4V @ 70µA 32nC @ 10V 1900pF @ 25V 10V ±20V
IRF1310NSTRLPBF
RFQ
VIEW
RFQ
3,078
In-stock
Infineon Technologies MOSFET N-CH 100V 42A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 22A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V
RCJ200N20TL
RFQ
VIEW
RFQ
2,870
In-stock
Rohm Semiconductor MOSFET N-CH 200V 20A LPTS - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 1.56W (Ta), 40W (Tc) N-Channel - 200V 20A (Tc) 130 mOhm @ 10A, 10V 5V @ 1mA 40nC @ 10V 1900pF @ 25V 10V ±30V
BUK6212-40C,118
RFQ
VIEW
RFQ
746
In-stock
Nexperia USA Inc. MOSFET N-CH 40V 50A DPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 40V 50A (Tc) 11.2 mOhm @ 12A, 10V 2.8V @ 1mA 33.9nC @ 10V 1900pF @ 25V 10V ±16V
IPD50N03S2L06ATMA1
RFQ
VIEW
RFQ
3,061
In-stock
Infineon Technologies MOSFET N-CH 30V 50A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 136W (Tc) N-Channel - 30V 50A (Tc) 6.4 mOhm @ 50A, 10V 2V @ 85µA 68nC @ 10V 1900pF @ 25V 4.5V, 10V ±20V