- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,452
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 61A D2PAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 136W (Tc) | N-Channel | - | 55V | 61A (Tc) | 16 mOhm @ 25A, 10V | 2V @ 1mA | 34nC @ 5V | 2210pF @ 25V | 4.5V, 10V | ±15V | |||
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VIEW |
2,107
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 10.3A (Ta), 60A (Tc) | 13 mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | 2210pF @ 25V | 10V | ±20V | |||
,%20SC-63.JPG)
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VIEW |
1,530
In-stock
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ON Semiconductor | MOSFET N-CH 500V 10A DPAK | FRFET®, QFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 143W (Tc) | N-Channel | - | 500V | 10A (Tc) | 610 mOhm @ 5A, 10V | 4V @ 250µA | 60nC @ 10V | 2210pF @ 25V | 10V | ±30V | |||
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VIEW |
3,653
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 10.3A (Ta), 60A (Tc) | 13 mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | 2210pF @ 25V | 10V | ±20V | |||
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VIEW |
3,228
In-stock
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STMicroelectronics | MOSFET N-CH 30V 85A D2PAK | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 30V | 85A (Tc) | 8 mOhm @ 40A, 10V | 1V @ 250µA | 40nC @ 4.5V | 2210pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,555
In-stock
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STMicroelectronics | MOSFET N-CH 30V 60A DPAK | STripFET™ II | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100W (Tc) | N-Channel | - | 30V | 60A (Tc) | 9.5 mOhm @ 30A, 10V | 1V @ 250µA | 40nC @ 4.5V | 2210pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,776
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 48A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 103W (Tc) | N-Channel | - | 55V | 48A (Tc) | 20 mOhm @ 25A, 10V | 2V @ 1mA | - | 2210pF @ 25V | 4.5V, 10V | ±15V | |||
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VIEW |
3,084
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 54A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 118W (Tc) | N-Channel | - | 55V | 54A (Tc) | 18 mOhm @ 25A, 10V | 2V @ 1mA | - | 2210pF @ 25V | 4.5V, 10V | ±10V | |||
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VIEW |
2,610
In-stock
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Infineon Technologies | MOSFET P-CH 150V 27A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | P-Channel | - | 150V | 27A (Tc) | 150 mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | 2210pF @ 25V | 10V | ±20V | |||
