Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLL3303TR
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2,961
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Infineon Technologies MOSFET N-CH 30V 4.6A SOT223 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 30V 4.6A (Ta) 31 mOhm @ 4.6A, 10V 1V @ 250µA 50nC @ 10V 840pF @ 25V 4.5V, 10V ±16V
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1,046
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ON Semiconductor T6 40V DPAK EXPANSION AND Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 3W (Ta), 30W (Tc) N-Channel - 40V 14A (Ta), 43A (Tc) 8.4 mOhm @ 15A, 10V 4V @ 30µA 14nC @ 10V 840pF @ 25V 10V ±20V
RD3U060CNTL1
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1,807
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Rohm Semiconductor NCH 250V 6A POWER MOSFET - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 52W (Tc) N-Channel - 250V 6A (Tc) 530 mOhm @ 3A, 10V 5V @ 1mA 15nC @ 10V 840pF @ 25V 10V ±30V
IRLL3303TRPBF
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1,710
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Infineon Technologies MOSFET N-CH 30V 4.6A SOT223 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 30V 4.6A (Ta) 31 mOhm @ 4.6A, 10V 1V @ 250µA 50nC @ 10V 840pF @ 25V 4.5V, 10V ±16V