Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDZ291P
RFQ
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RFQ
3,972
In-stock
ON Semiconductor MOSFET P-CH 20V 4.6A BGA PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-VFBGA 9-BGA (1.5x1.6) 1.7W (Ta) P-Channel - 20V 4.6A (Ta) 40 mOhm @ 4.6A, 4.5V 1V @ 250µA 13nC @ 4.5V 1010pF @ 10V 1.5V, 4.5V ±8V
CSD25202W15T
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VIEW
RFQ
1,118
In-stock
Texas Instruments MOSFET P-CH 20V 4A 9DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 500mW (Ta) P-Channel - 20V 4A (Ta) 26 mOhm @ 2A, 4.5V 1.05V @ 250µA 7.5nC @ 4.5V 1010pF @ 10V 1.8V, 4.5V -6V
CSD25202W15
RFQ
VIEW
RFQ
757
In-stock
Texas Instruments MOSFET P-CH 20V 4A 9DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 500mW (Ta) P-Channel - 20V 4A (Ta) 26 mOhm @ 2A, 4.5V 1.05V @ 250µA 7.5nC @ 4.5V 1010pF @ 10V 1.8V, 4.5V -6V
SSM3K123TU,LF
RFQ
VIEW
RFQ
601
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.2A UFM U-MOSIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) N-Channel - 20V 4.2A (Ta) 28 mOhm @ 3A, 4V 1V @ 1mA 13.6nC @ 4V 1010pF @ 10V 1.5V, 4V ±10V