Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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MTD6N20ET4
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2,179
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ON Semiconductor MOSFET N-CH 200V 6A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.75W (Ta), 50W (Tc) N-Channel - 200V 6A (Tc) 700 mOhm @ 3A, 10V 4V @ 250µA 21nC @ 10V 480pF @ 25V 10V ±20V
MTD6N20ET4G
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3,684
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ON Semiconductor MOSFET N-CH 200V 6A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.75W (Ta), 50W (Tc) N-Channel - 200V 6A (Tc) 700 mOhm @ 3A, 10V 4V @ 250µA 21nC @ 10V 480pF @ 25V 10V ±20V
IRLZ24NSTRLPBF
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RFQ
2,872
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Infineon Technologies MOSFET N-CH 55V 18A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 45W (Tc) N-Channel - 55V 18A (Tc) 60 mOhm @ 11A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
IRFM120ATF
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RFQ
3,478
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ON Semiconductor MOSFET N-CH 100V 2.3A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.4W (Ta) N-Channel - 100V 2.3A (Ta) 200 mOhm @ 1.15A, 10V 4V @ 250µA 22nC @ 10V 480pF @ 25V 10V ±20V
IRLR024NTRPBF
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RFQ
1,847
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Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V