- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,908
In-stock
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Texas Instruments | MOSFET P-CH 20V 2.2A 6DSBGA | NexFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA (1x1.5) | 1.5W (Ta) | P-Channel | - | 20V | 2.2A (Tc) | 75 mOhm @ 1A, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,272
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.3A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 900mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3.3A (Ta) | 125 mOhm @ 3.3A, 10V | 2V @ 250µA | 10nC @ 10V | 270pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,678
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 3A (Ta) | 71 mOhm @ 2A, 4V | - | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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|
VIEW |
3,588
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | |||
|
VIEW |
1,712
In-stock
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Rohm Semiconductor | 2.5V DRIVE NCH MOSFET | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | - | 30V | 2.5A (Ta) | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | 270pF @ 10V | 2.5V, 4.5V | - | |||
|
VIEW |
3,799
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
2,525
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 2.5A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | - | 30V | 2.5A (Ta) | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | 270pF @ 10V | 2.5V, 4.5V | 12V | |||
|
VIEW |
3,042
In-stock
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ON Semiconductor | MOSFET N-CH 20V 1.9A SC70-6 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | 750mW (Ta) | N-Channel | - | 20V | 1.9A (Ta) | 115 mOhm @ 1.9A, 4.5V | 1.5V @ 250µA | 4.5nC @ 4.5V | 270pF @ 10V | 2.5V, 4.5V | ±8V | |||
|
VIEW |
2,197
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | - | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
