Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RTF016N05TL
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3,710
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Rohm Semiconductor MOSFET N-CH 45V 1.6A TUMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads TUMT3 320mW (Ta) N-Channel - 45V 1.6A (Ta) 190 mOhm @ 1.6A, 4.5V 1.5V @ 1mA 2.3nC @ 4.5V 150pF @ 10V 2.5V, 4.5V ±12V
US5U29TR
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RFQ
2,357
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Rohm Semiconductor MOSFET P-CH 20V 1A TUMT5 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD (5 Leads), Flat Lead TUMT5 1W (Ta) P-Channel Schottky Diode (Isolated) 20V 1A (Ta) 390 mOhm @ 1A, 4.5V 2V @ 1mA 2.1nC @ 5V 150pF @ 10V 2.5V, 4.5V ±12V
US5U38TR
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RFQ
3,802
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Rohm Semiconductor MOSFET P-CH 20V 1A TUMT5 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD (5 Leads), Flat Lead TUMT5 1W (Ta) P-Channel Schottky Diode (Isolated) 20V 1A (Ta) 390 mOhm @ 1A, 4.5V 2V @ 1mA 2.1nC @ 4.5V 150pF @ 10V 2.5V, 4.5V ±12V
RTF010P02TL
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RFQ
1,326
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Rohm Semiconductor MOSFET P-CH 20V 1A TUMT3 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads TUMT3 800mW (Ta) P-Channel - 20V 1A (Ta) 390 mOhm @ 1A, 4.5V 2V @ 1mA 2.1nC @ 4.5V 150pF @ 10V 2.5V, 4.5V ±12V
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RFQ
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RFQ
1,303
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE NCH π-MOSV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount 3-SMD, Flat Leads UFM 800mW (Ta) N-Channel - 60V 2A (Ta) 300 mOhm @ 1A, 10V 2V @ 1mA 6nC @ 10V 150pF @ 10V 3.3V, 10V ±20V
DMN100-7-F
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RFQ
615
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Diodes Incorporated MOSFET N-CH 30V 1.1A SC59-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59-3 500mW (Ta) N-Channel - 30V 1.1A (Ta) 240 mOhm @ 1A, 10V 3V @ 1mA 5.5nC @ 10V 150pF @ 10V 4.5V, 10V ±20V
SSM3K2615R,LF
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RFQ
2,569
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 2A SOT23 π-MOSV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 60V 2A (Ta) 300 mOhm @ 1A, 10V 2V @ 1mA - 150pF @ 10V 3.3V, 10V ±20V