Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQB7N60TM-WS
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3,594
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ON Semiconductor MOSFET N-CH 600V 7.4A D2PAK QFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 142W (Tc) N-Channel - 600V 7.4A (Tc) 1 Ohm @ 3.7A, 10V 5V @ 250µA 38nC @ 10V 1430pF @ 25V 10V ±30V
FQB7N60TM
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3,837
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ON Semiconductor MOSFET N-CH 600V 7.4A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 142W (Tc) N-Channel - 600V 7.4A (Tc) 1 Ohm @ 3.7A, 10V 5V @ 250µA 38nC @ 10V 1430pF @ 25V 10V ±30V
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828
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Infineon Technologies MOSFET N-CH 40V 70A 8TDSON-34 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8-34 50W (Tc) N-Channel - 40V 70A (Tc) 4.6 mOhm @ 35A, 10V 3.4V @ 17µA 24.2nC @ 10V 1430pF @ 25V 7V, 10V ±20V
IPD50N04S410ATMA1
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1,243
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3-313 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 41W (Tc) N-Channel - 40V 50A (Tc) 9.3 mOhm @ 50A, 10V 4V @ 15µA 18.2nC @ 10V 1430pF @ 25V 10V ±20V