Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
MTM867270LBF
RFQ
VIEW
RFQ
2,382
In-stock
Panasonic Electronic Components MOSFET N-CH 20V 2.2A WSSMINI6 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads WSSMini6-F1 540mW (Ta) N-Channel - 20V 2.2A (Ta) 105 mOhm @ 1A, 4V 1.3V @ 1mA - 280pF @ 10V 2.5V, 4V ±10V
QS5U36TR
RFQ
VIEW
RFQ
1,331
In-stock
Rohm Semiconductor MOSFET N-CH 20V 2.5A TSMT5 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-5 Thin, TSOT-23-5 TSMT5 1.25W (Ta) N-Channel Schottky Diode (Isolated) 20V 2.5A (Ta) 81 mOhm @ 2.5A, 4.5V 1.3V @ 1mA 3.5nC @ 4.5V 280pF @ 10V 1.5V, 4.5V ±10V
MTM862270LBF
RFQ
VIEW
RFQ
3,117
In-stock
Panasonic Electronic Components MOSFET N-CH 20V 2.2A WSSMINI6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads WSSMini6-F1 540mW (Ta) N-Channel - 20V 2.2A (Ta) 105 mOhm @ 1A, 4V 1.3V @ 1mA - 280pF @ 10V 1.8V, 4V ±10V