- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,814
In-stock
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Infineon Technologies | MOSFET N-CH 20V 1.4A SOT363 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 | 500mW (Ta) | N-Channel | 20V | 1.4A (Ta) | 160 mOhm @ 1.4A, 2.5V | 950mV @ 3.7µA | 0.6nC @ 2.5V | 180pF @ 10V | 1.8V, 2.5V | ±8V | ||||
VIEW |
1,668
In-stock
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ON Semiconductor | MOSFET P-CH 20V 1.1A SSOT-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | P-Channel | 20V | 1.1A (Ta) | 210 mOhm @ 1.3A, 10V | 2.5V @ 250µA | 5nC @ 5V | 180pF @ 10V | 4.5V, 10V | ±12V | ||||
VIEW |
2,584
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.9A TSM | π-MOSVII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 2.9A (Ta) | 83 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
2,822
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 2A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 320mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | 1.5V, 4.5V | ±10V | ||||
VIEW |
1,394
In-stock
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Infineon Technologies | MOSFET N-CH 20V 1.4A SOT323 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 500mW (Ta) | N-Channel | 20V | 1.4A (Ta) | 160 mOhm @ 1.4A, 2.5V | 0.75V @ 3.7µA | 0.6nC @ 2.5V | 180pF @ 10V | 1.8V, 2.5V | ±8V | ||||
VIEW |
2,657
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 700MA SC59-3 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 500mW (Ta) | P-Channel | 20V | 700mA (Ta) | 300 mOhm @ 400mA, 4.5V | 1.2V @ 250µA | - | 180pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
1,158
In-stock
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Rohm Semiconductor | MOSFET N-CH 60V 2A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 540mW (Ta) | N-Channel | 60V | 2A (Ta) | 170 mOhm @ 2A, 10V | 2.5V @ 1mA | 4.9nC @ 10V | 180pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
3,661
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 2A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 540mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | 1.5V, 4.5V | ±10V | ||||
VIEW |
2,111
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 1.2A SC59-3 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 500mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.4V @ 1mA | - | 180pF @ 10V | 2.5V, 4.5V | ±12V |