- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,582
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 5.1A 6TSOP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP | 500mW (Ta) | N-Channel | - | 30V | 5.1A (Ta) | 31 mOhm @ 5.1A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 334pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,335
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.8A (Ta) | 240 mOhm @ 1.8A, 10V | 4V @ 218µA | 9.3nC @ 10V | 265pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,030
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 100V 6.5A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 9W (Tc) | N-Channel | - | 100V | 6.5A (Tc) | 95 mOhm @ 5A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 1480pF @ 50V | 4.5V, 10V | ±20V | |||
.jpg)
|
VIEW |
2,434
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 100V 15A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 50W (Tc) | N-Channel | - | 100V | 15A (Tc) | 90 mOhm @ 5A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 1480pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
706
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 11A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 25W (Tc) | N-Channel | - | 60V | 11A (Tc) | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 500pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,521
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 11A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 25W (Tc) | N-Channel | - | 60V | 11A (Tc) | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 500pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,578
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
1,466
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
3,235
In-stock
|
ON Semiconductor | MOSFET P-CH 30V 3A 8-SOIC | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.6W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 3A (Ta) | 115 mOhm @ 3A, 10V | 3V @ 250µA | 9.3nC @ 10V | 455pF @ 10V | 4.5V, 10V | ±25V | |||
|
VIEW |
2,515
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6A | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
2,878
In-stock
|
Rohm Semiconductor | MOSFET N-CH 200V 5A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 20W (Tc) | N-Channel | - | 200V | 5A (Ta) | 720 mOhm @ 2.5A, 10V | 4V @ 1mA | 9.3nC @ 10V | 292pF @ 10V | 10V | ±30V | |||
