Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDMS2506SDC
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ON Semiconductor MOSFET N-CH 25V 39A POWER56 Dual Cool™, PowerTrench®, SyncFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN Dual Cool™56 3.3W (Ta), 89W (Tc) N-Channel - 25V 39A (Ta), 49A (Tc) 1.45 mOhm @ 30A, 10V 3V @ 1mA 93nC @ 10V 5945pF @ 13V 4.5V, 10V ±20V
BSC020N03LSGATMA1
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2,480
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 96W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 2 mOhm @ 30A, 10V 2.2V @ 250µA 93nC @ 10V 7200pF @ 15V 4.5V, 10V ±20V
FDMS7560S
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1,064
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ON Semiconductor MOSFET N-CH 25V 30A POWER56 PowerTrench®, SyncFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 89W (Tc) N-Channel - 25V 30A (Ta), 49A (Tc) 1.45 mOhm @ 30A, 10V 3V @ 1mA 93nC @ 10V 5945pF @ 13V 4.5V, 10V ±20V
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2,815
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Vishay Siliconix MOSFET N-CHAN 30V POWERPAK 1212- TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 5W (Ta), 65.7W (Tc) N-Channel - 30V 50.5A (Ta), 80A (Tc) 1.2 mOhm @ 15A, 10V 2.2V @ 250µA 93nC @ 10V 4460pF @ 15V 4.5V, 10V +16V, -12V
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3,292
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Vishay Siliconix MOSFET N-CHAN 30V TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5.2W (Ta), 65.7W (Tc) N-Channel - 30V 51.4A (Ta), 80A (Tc) 1.2 mOhm @ 15A, 10V 2.2V @ 250µA 93nC @ 10V 4460pF @ 15V 4.5V, 10V +16V, -12V
IPB65R045C7ATMA1
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2,500
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Infineon Technologies MOSFET N-CH 650V 46A TO-263-3 CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 227W (Tc) N-Channel - 650V 46A (Tc) 45 mOhm @ 24.9A, 10V 4V @ 1.25mA 93nC @ 10V 4340pF @ 400V 10V ±20V