Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CHAN 100V POWERPAK SO-8 TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5W (Ta), 65.7W (Tc) N-Channel - 100V 12.4A (Ta), 45A (Tc) 13.5 mOhm @ 10A, 10V 3.6V @ 250µA 41.5nC @ 10V 2060pF @ 50V 7.5V, 10V ±20V
STL33N65M2
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2,775
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STMicroelectronics N-CHANNEL 650 V, 0.124 OHM TYP., MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-PowerFlat™ HV PowerFlat™ (8x8) HV 150W (Tc) N-Channel - 650V 20A (Tc) 154 mOhm @ 10A, 10V 4V @ 250µA 41.5nC @ 10V 1790pF @ 100V 10V ±25V
PSMN4R3-30BL,118
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2,073
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Nexperia USA Inc. MOSFET N-CH 30V 100A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 103W (Tc) N-Channel - 30V 100A (Tc) 4.1 mOhm @ 15A, 10V 2.15V @ 1mA 41.5nC @ 10V 2400pF @ 15V 4.5V, 10V ±20V
STB33N65M2
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1,405
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STMicroelectronics MOSFET N-CH 650V 24A D2PAK MDmesh™ M2 Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 650V 24A (Tc) 140 mOhm @ 12A, 10V 4V @ 250µA 41.5nC @ 10V 1790pF @ 100V 10V ±25V