- Manufacture :
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- Part Status :
- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,155
In-stock
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NXP USA Inc. | MOSFET N-CH 20V 6.6A 6DFN | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | N-Channel | - | 20V | 6.6A (Ta) | 25 mOhm @ 6.6A, 4.5V | 1V @ 250µA | 7.1nC @ 4.5V | 460pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
731
In-stock
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Infineon Technologies | MOSFET N-CH 20V 37A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 35W (Tc) | N-Channel | - | 20V | 37A (Tc) | 15 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
3,847
In-stock
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Texas Instruments | MOSFET N-CH 25V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3W (Ta) | N-Channel | - | 25V | 100A (Tc) | 4.7 mOhm @ 20A, 8V | 1.1V @ 250µA | 7.1nC @ 4.5V | 1350pF @ 12.5V | 2.5V, 8V | +10V, -8V | |||
