Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMPB16XN,115
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3,673
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NXP USA Inc. MOSFET N-CH 30V 7.2A 6DFN - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 6-DFN2020MD (2x2) 1.7W (Ta), 12.5W (Tc) N-Channel - 30V 7.2A (Ta) 21 mOhm @ 7.2A, 4.5V 1.5V @ 250µA 10.8nC @ 4.5V 775pF @ 15V 2.5V, 4.5V ±12V
NTMFS4955NT1G
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3,936
In-stock
ON Semiconductor MOSFET N-CH 30V 48A SO8FL - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN, 5 Leads 5-DFN (5x6) (8-SOFL) 920mW (Ta), 23.2W (Tc) N-Channel - 30V 9.7A (Ta), 48A (Tc) 6 mOhm @ 30A, 10V 2.2V @ 250µA 10.8nC @ 4.5V 1264pF @ 15V 4.5V, 10V ±20V
SSM6K211FE,LF
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RFQ
1,849
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 20V 3.2A ES6 U-MOSIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) N-Channel - 20V 3.2A (Ta) 47 mOhm @ 2A, 4.5V 1V @ 1mA 10.8nC @ 4.5V 510pF @ 10V 1.5V, 4.5V ±10V
FDG332PZ
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3,739
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ON Semiconductor MOSFET P-CH 20V 2.6A SC70-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 750mW (Ta) P-Channel - 20V 2.6A (Ta) 95 mOhm @ 2.6A, 4.5V 1.5V @ 250µA 10.8nC @ 4.5V 560pF @ 10V 1.8V, 4.5V ±8V