- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,904
In-stock
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ON Semiconductor | PTNG 100V N-FET TOLL | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | 8-HPSOF | 300W (Ta) | N-Channel | - | 100V | 185A (Tc) | 4.1 mOhm @ 80A, 10V | 4V @ 250µA | 69nC @ 10V | 3240pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,164
In-stock
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Infineon Technologies | MOSFET N-CH 60V 79A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,395
In-stock
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Infineon Technologies | MOSFET N-CH 60V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,811
In-stock
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Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 150W (Tc) | N-Channel | - | 80V | 90A (Tc) | 5.3 mOhm @ 90A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
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|
VIEW |
2,691
In-stock
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Infineon Technologies | MOSFET N-CH 80V 80A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.4 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
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VIEW |
3,322
In-stock
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Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-11 | 136W (Tc) | N-Channel | - | 55V | 30A (Tc) | 13 mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | 1800pF @ 25V | 4.5V, 10V | ±20V | |||
