- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,853
In-stock
|
Nexperia USA Inc. | PSMN3R5-25MLD/MLFPAK/REEL 7 Q | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 65W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 70A (Tc) | 6.4 mOhm @ 25A, 10V | 2.2V @ 1mA | 18.9nC @ 10V | 1334pF @ 12V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,314
In-stock
|
Diodes Incorporated | MOSFET BVDSS: 41V 60V POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.16W (Ta) | N-Channel | - | 60V | 10.6A (Ta), 31A (Tc) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 10V | 1103pF @ 30V | 4.5V, 10V | ±16V | |||
|
VIEW |
3,791
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 20A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.75W (Ta), 74W (Tc) | N-Channel | - | 30V | 20A (Ta) | 27 mOhm @ 10A, 5V | 2V @ 250µA | 18.9nC @ 10V | 1260pF @ 25V | 4V, 5V | ±20V | |||
