- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,692
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.7W (Ta) | N-Channel | - | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | 95pF @ 25V | 2.8V, 4.5V | ±20V | |||
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VIEW |
2,421
In-stock
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ON Semiconductor | MOSFET N-CH 100V 3.3A SOT223 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.2W (Ta) | N-Channel | - | 100V | 3.3A (Tc) | 100 mOhm @ 3.3A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | 315pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,641
In-stock
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Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.7W (Ta) | N-Channel | - | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | 95pF @ 25V | 2.8V, 4.5V | ±20V | |||
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VIEW |
918
In-stock
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Infineon Technologies | MOSFET N-CH 150V 0.9A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | N-Channel | - | 150V | 900mA (Ta) | 1.2 Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | 10V | ±30V | |||
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VIEW |
895
In-stock
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Infineon Technologies | MOSFET N-CH 4SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | 95pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
3,108
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.3A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.09W (Ta), 1.66W (Tc) | N-Channel | - | 60V | 2.3A (Tc) | 156 mOhm @ 1.9A, 10V | 3V @ 250µA | 6.8nC @ 10V | 190pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,964
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.3A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.09W (Ta), 1.66W (Tc) | N-Channel | - | 60V | 2.3A (Tc) | 156 mOhm @ 1.9A, 10V | 3V @ 250µA | 6.8nC @ 10V | 190pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
2,845
In-stock
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Nexperia USA Inc. | MOSFET N-CHANNEL 100V 1.5A SC73 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SC-73 | 770mW (Ta) | N-Channel | - | 100V | 1.5A (Ta) | 385 mOhm @ 1.5A, 10V | 2.7V @ 250µA | 6.8nC @ 10V | 195pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
859
In-stock
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Infineon Technologies | MOSFET N-CH 150V 0.9A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | N-Channel | - | 150V | 900mA (Ta) | 1.2 Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | 10V | ±30V | |||
