Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFZ44STRRPBF
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Vishay Siliconix MOSFET N-CH 60V 50A D2PAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 150W (Tc) N-Channel - 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 10V ±20V
IRF640NSTRRPBF
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3,592
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Infineon Technologies MOSFET N-CH 200V 18A D2PAK HEXFET® Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
BUK626R2-40C,118
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3,271
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Nexperia USA Inc. MOSFET N-CH 40V 90A DPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 128W (Tc) N-Channel - 40V 90A (Tc) 6.2 mOhm @ 15A, 10V 2.8V @ 1mA 67nC @ 10V 3720pF @ 25V 10V ±16V
IRF640NSTRLPBF
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1,564
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Infineon Technologies MOSFET N-CH 200V 18A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V