Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPD068P03L3GBTMA1
RFQ
VIEW
RFQ
3,648
In-stock
Infineon Technologies MOSFET P-CH 30V 70A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 100W (Tc) P-Channel - 30V 70A (Tc) 6.8 mOhm @ 70A, 10V 2V @ 150µA 91nC @ 10V 7720pF @ 15V 4.5V, 10V ±20V
BUK762R7-30B,118
RFQ
VIEW
RFQ
2,559
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 75A D2PAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 30V 75A (Tc) 2.7 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 6212pF @ 25V 10V ±20V
FDS6699S
RFQ
VIEW
RFQ
1,541
In-stock
ON Semiconductor MOSFET N-CH 30V 21A 8SOIC PowerTrench®, SyncFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.6 mOhm @ 21A, 10V 3V @ 1mA 91nC @ 10V 3610pF @ 15V 4.5V, 10V ±20V
IPD068P03L3GATMA1
RFQ
VIEW
RFQ
3,532
In-stock
Infineon Technologies MOSFET P-CH 30V 70A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 100W (Tc) P-Channel - 30V 70A (Tc) 6.8 mOhm @ 70A, 10V 2V @ 150µA 91nC @ 10V 7720pF @ 15V 4.5V, 10V ±20V