- Series :
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- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,758
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 600V | 120mA (Ta) | 45 Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,203
In-stock
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Diodes Incorporated | MOSFET N-CH 150V 1.7A DPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 2.2W (Ta) | N-Channel | - | 150V | 1.7A (Ta) | 650 mOhm @ 2.15A, 10V | 4V @ 250µA | 6.6nC @ 10V | 169pF @ 25V | 10V | ±25V | |||
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VIEW |
3,318
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT223 | SIPMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 600V | 120mA (Ta) | - | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,035
In-stock
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ON Semiconductor | T6 40V MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.7W (Ta), 83W (Tc) | N-Channel | - | 40V | 29A (Ta), 140A (Tc) | 2.3 mOhm @ 50A, 10V | 4V @ 250µA | 6.6nC @ 10V | 2100pF @ 25V | 10V | ±20V | |||
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VIEW |
3,656
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1.8A 6-TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | N-Channel | - | 100V | 1.8A (Ta) | 170 mOhm @ 2.4A, 10V | 2V @ 250µA (Min) | 6.6nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
3,411
In-stock
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Diodes Incorporated | MOSFET N-CH 240V 0.48A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 760mW (Ta) | N-Channel | - | 240V | 480mA (Ta) | 3.5 Ohm @ 300mA, 10V | 2.5V @ 250µA | 6.6nC @ 10V | 188pF @ 25V | 3.3V, 10V | ±20V | |||
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VIEW |
1,175
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1.8A 6-TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | N-Channel | - | 100V | 1.8A (Ta) | 170 mOhm @ 2.4A, 10V | 2V @ 250µA (Min) | 6.6nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
2,217
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 600V | 120mA (Ta) | 45 Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | 4.5V, 10V | ±20V | |||
