Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies 80V 165A 2.9MOHM TOLL OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-1 167W (Tc) N-Channel - 80V 165A (Tc) 2.9 mOhm @ 80A, 10V 3.8V @ 108µA 90nC @ 10V 6370pF @ 40V 6V, 10V ±20V
TSM089N08LCR RLG
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704
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Taiwan Semiconductor Corporation MOSFET N-CH 80V 67A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel - 80V 67A (Tc) 8.9 mOhm @ 12A, 10V 2.5V @ 250µA 90nC @ 10V 6119pF @ 40V 4.5V, 10V ±20V
SIR826DP-T1-GE3
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790
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Vishay Siliconix MOSFET N-CH 80V 60A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 80V 60A (Tc) 4.8 mOhm @ 20A, 10V 2.8V @ 250µA 90nC @ 10V 2900pF @ 40V 4.5V, 10V ±20V