Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STL6N2VH5
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STMicroelectronics MOSFET N-CH 20V 6A 6PWRFLAT STripFET™ V Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerWDFN PowerFlat™ (2x2) 2.4W (Tc) N-Channel - 20V - 30 mOhm @ 3A, 4.5V 700mV @ 250µA 6nC @ 4.5V 550pF @ 16V 2.5V, 4.5V ±8V
FDG327NZ
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2,271
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ON Semiconductor MOSFET N-CH 20V 1.5A SC70-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 420mW (Ta) N-Channel - 20V 1.5A (Ta) 90 mOhm @ 1.5A, 4.5V 1.5V @ 250µA 6nC @ 4.5V 412pF @ 10V 1.8V, 4.5V ±8V
FDFMA2P853
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3,825
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ON Semiconductor MOSFET P-CH 20V 3A MICROFET6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 1.4W (Ta) P-Channel Schottky Diode (Isolated) 20V 3A (Ta) 120 mOhm @ 3A, 4.5V 1.3V @ 250µA 6nC @ 4.5V 435pF @ 10V 1.8V, 4.5V ±8V
NX2301P,215
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2,170
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Nexperia USA Inc. MOSFET P-CH 20V 2A TO-236AB Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 400mW (Ta), 2.8W (Tc) P-Channel - 20V 2A (Ta) 120 mOhm @ 1A, 4.5V 1.1V @ 250µA 6nC @ 4.5V 380pF @ 6V 2.5V, 4.5V ±8V