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- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,163
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 0.87A SC89 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 170mW (Ta) | P-Channel | - | 12V | 870mA (Ta) | 165 mOhm @ 870mA, 4.5V | 450mV @ 250µA (Min) | 6nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,003
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 0.87A SOT563F | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 170mW (Ta) | P-Channel | - | 12V | 870mA (Ta) | 165 mOhm @ 870mA, 4.5V | 450mV @ 250µA (Min) | 6nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
|
VIEW |
1,910
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3A 6-MICROFET | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | MicroFET 2x2 Thin | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,596
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3A MICROFET | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | MicroFET 2x2 Thin | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
3,722
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3A MICROFET2X2 | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,773
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,348
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,271
In-stock
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ON Semiconductor | MOSFET N-CH 20V 1.5A SC70-6 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | 420mW (Ta) | N-Channel | - | 20V | 1.5A (Ta) | 90 mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 6nC @ 4.5V | 412pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
3,825
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3A MICROFET6 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 1.8V, 4.5V | ±8V | |||
