- Manufacture :
- Part Status :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,148
In-stock
|
EPC | TRANS GAN 100V 11A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 100V | 11A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | 520pF @ 50V | 5V | +6V, -5V | ||||
VIEW |
2,286
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 3A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | P-Channel | 30V | 3A (Ta) | 75 mOhm @ 3A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
3,165
In-stock
|
ON Semiconductor | MOSFET N-CH 200V 0.85A SOT-223 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.2W (Tc) | N-Channel | 200V | 850mA (Tc) | 1.35 Ohm @ 425mA, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 5V, 10V | ±20V | ||||
VIEW |
3,646
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 2.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
2,830
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 2.5A TUMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 | 320mW (Ta) | P-Channel | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
2,061
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 4A SOP8 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 650mW (Ta) | P-Channel | 30V | 4A (Ta) | 75 mOhm @ 4A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V |