Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMN3065LW-13
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3,482
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Diodes Incorporated MOSFET N-CH 30V 4A SOT323 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-70, SOT-323 SOT-323 770mW (Ta) N-Channel 30V 4A (Ta) 52 mOhm @ 4A, 10V 1.5V @ 250µA 11.7nC @ 10V 465pF @ 15V 2.5V, 10V ±12V
PSMN9R0-25MLC,115
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2,229
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Nexperia USA Inc. MOSFET N-CH 25V 55A LFPAK33 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33 45W (Tc) N-Channel 25V 55A (Tc) 8.65 mOhm @ 15A, 10V 1.95V @ 1mA 11.7nC @ 10V 705pF @ 12.5V 4.5V, 10V ±20V
IRF6655TRPBF
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1,370
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Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 4.8V @ 25µA 11.7nC @ 10V 530pF @ 25V 10V ±20V
DMG3402L-7
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2,564
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Diodes Incorporated MOSFET N-CH 30V 4A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.4W (Ta) N-Channel 30V 4A (Ta) 52 mOhm @ 4A, 10V 1.4V @ 250µA 11.7nC @ 10V 464pF @ 15V 2.5V, 10V ±12V
DMN3065LW-7
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3,947
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Diodes Incorporated MOSFET N-CH 30V 4A SOT-323 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-70, SOT-323 SOT-323 770mW (Ta) N-Channel 30V 4A (Ta) 52 mOhm @ 4A, 10V 1.5V @ 250µA 11.7nC @ 10V 465pF @ 15V 2.5V, 10V ±12V