- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,718
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 80V 24A SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 48W (Tc) | N-Channel | - | 80V | 24A (Tc) | 12.3 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 40V | 10V | ±20V | ||||
VIEW |
2,139
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 26A SOP8 | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | N-Channel | - | 250V | 26A (Tc) | 52 mOhm @ 13A, 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | 10V | ±20V | ||||
VIEW |
1,287
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 200V 33A SOP8 | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | N-Channel | - | 200V | 33A (Ta) | 29 mOhm @ 16.5A, 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | 10V | ±20V | ||||
VIEW |
1,465
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 24A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 48W (Tc) | N-Channel | - | 100V | 24A (Tc) | 13.6 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 50V | 10V | ±20V | ||||
VIEW |
2,769
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 60V | 26A (Tc) | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | 6.5V, 10V | ±20V |